BUK9Y38-100E,115

Teknik Özellikler

Transistor Element Material

SILICON

Yayın Yılı

2013

Parça Durumu

Active

Vgsth Max Id

2.1V @ 1mA

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

2541pF @ 25V

Drain To Source Breakdown Voltage

100V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

38m Ω @ 5A, 5V

Continuous Drain Current Id

30A

Yüzey Montaj

YES

Turn On Delay Time

10 ns

Terminal Formu

GULL WING

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

SC-100, SOT-669

Fall Time Typ

18 ns

Number Of Channels

1

REACH Uyumluluk Kodu

not_compliant

Gate Charge Qg Max Vgs

21.6nC @ 5V

Fabrika Tedarik Süresi

12 Weeks

Terminal Sayısı

4

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Seri

Automotive, AEC-Q101, TrenchMOS™

Contact Plating

Tin

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Pin Sayısı

4

Case Connection

DRAIN

Jedec95 Code

MO-235

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

5V 10V

Gate To Source Voltage Vgs

10V

Vgs Max

±10V

Current Continuous Drain Id25

30A Tc

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape & Reel (TR)

Additional Feature

AVALANCHE RATED

Drainsource On Resistancemax

0.038Ohm