Adet bazlı fiyat
- 1+ adet$0.97
- 10+ adet$0.91
- 100+ adet$0.86
- 500+ adet$0.81
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- JESD-609 Kodu
- e3
- Drive Voltage Max Rds On Min Rds On
- 5V
- Jedec95 Code
- MO-235
- Transistor Application
- SWITCHING
- Pin Sayısı
- 4
- Case Connection
- DRAIN
- Kurşunsuz
- Lead Free
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 7ns
- Ambalaj
- Tape & Reel (TR)
- Additional Feature
- AVALANCHE RATED
- Pin Sayısı
- 4
- Drainsource On Resistancemax
- 0.029Ohm
- Turn Off Delay Time
- 9 ns
- Power Dissipation Max
- 37W Tc
- Max Dual Supply Voltage
- 40V
- Gate To Source Voltage Vgs
- 10V
- Avalanche Energy Rating Eas
- 8.77 mJ
- Vgs Max
- ±10V
- Current Continuous Drain Id25
- 25A Tc
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Rds On Max Id Vgs
- 25m Ω @ 5A, 10V
- Input Capacitance Ciss Max Vds
- 664pF @ 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yüzey Montaj
- YES
- Turn On Delay Time
- 6 ns
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 25A
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2013
- Parça Durumu
- Active
- Vgsth Max Id
- 2.1V @ 1mA
- Fet Type
- N-Channel
- Fabrika Tedarik Süresi
- 12 Weeks
- Gate Charge Qg Max Vgs
- 5nC @ 5V
- REACH Uyumluluk Kodu
- not_compliant
- Terminal Kaplaması
- Tin (Sn)
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Number Of Elements
- 1
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