Adet bazlı fiyat
- 1+ adet$0.47
- 10+ adet$0.45
- 100+ adet$0.42
- 500+ adet$0.40
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Fabrika Tedarik Süresi
- 12 Weeks
- Gate Charge Qg Max Vgs
- 32nC @ 5V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Number Of Elements
- 1
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Terminal Pozisyonu
- SINGLE
- Contact Plating
- Tin
- Terminal Sayısı
- 4
- Kılıf / Paket
- SC-100, SOT-669
- RoHS Durumu
- ROHS3 Compliant
- Fall Time Typ
- 63 ns
- Rds On Max Id Vgs
- 11m Ω @ 20A, 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 2880pF @ 25V
- Terminal Formu
- GULL WING
- Turn On Delay Time
- 29 ns
- Yüzey Montaj
- YES
- Continuous Drain Current Id
- 61.8A
- Yayın Yılı
- 2010
- Power Dissipation
- 106W
- Transistor Element Material
- SILICON
- Fet Type
- N-Channel
- Vgsth Max Id
- 2.15V @ 1mA
- Parça Durumu
- Active
- Rise Time
- 78ns
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 4
- Ambalaj
- Tape & Reel (TR)
- Max Dual Supply Voltage
- 55V
- Power Dissipation Max
- 106W Tc
- Turn Off Delay Time
- 100 ns
- Gate To Source Voltage Vgs
- 15V
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Current Continuous Drain Id25
- 61.8A Tc
- Vgs Max
- ±15V
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- JESD-609 Kodu
- e3
- Jedec95 Code
- MO-235
- Radyasyon Dayanımı
- No
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