Adet bazlı fiyat
- 1+ adet$1.13
- 10+ adet$1.07
- 100+ adet$1.01
- 500+ adet$0.95
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Input Capacitance Ciss Max Vds
- 1139pF @ 25V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 99m Ω @ 5A, 10V
- Continuous Drain Current Id
- 14.8A
- Yüzey Montaj
- NO
- Terminal Formu
- THROUGH-HOLE
- Turn On Delay Time
- 15 ns
- Transistor Element Material
- SILICON
- Power Dissipation
- 59W
- Yayın Yılı
- 2010
- Parça Durumu
- Active
- Vgsth Max Id
- 2.15V @ 1mA
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 11nC @ 5V
- Fabrika Tedarik Süresi
- 12 Weeks
- Terminal Sayısı
- 4
- Terminal Pozisyonu
- SINGLE
- Contact Plating
- Tin
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Number Of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- SC-100, SOT-669
- Fall Time Typ
- 6 ns
- Jedec95 Code
- MO-235
- JESD-609 Kodu
- e3
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Transistor Application
- SWITCHING
- Pin Sayısı
- 4
- Radyasyon Dayanımı
- No
- Case Connection
- DRAIN
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 4
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 8ns
- Power Dissipation Max
- 59W Tc
- Pulsed Drain Currentmax Idm
- 59A
- Turn Off Delay Time
- 36 ns
- Max Dual Supply Voltage
- 100V
- Avalanche Energy Rating Eas
- 35 mJ
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