BUK9M7R2-40EX

Teknik Özellikler

Yayın Yılı

2016

Transistor Element Material

SILICON

Vgsth Max Id

2.1V @ 1mA

Fet Type

N-Channel

Parça Durumu

Active

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

40V

Input Capacitance Ciss Max Vds

2567pF @ 25V

Rds On Max Id Vgs

5.8m Ω @ 20A, 10V

Drain To Source Voltage Vdss

40V

Continuous Drain Current Id

70A

Terminal Formu

GULL WING

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

SOT-1210, 8-LFPAK33

Gate Charge Qg Max Vgs

19.7nC @ 5V

Fabrika Tedarik Süresi

26 Weeks

Terminal Sayısı

4

Terminal Pozisyonu

SINGLE

Seri

Automotive, AEC-Q101, TrenchMOS™

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G4

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

5V

Avalanche Energy Rating Eas

58.8 mJ

Reference Standard

AEC-Q101; IEC-60134

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±10V

Current Continuous Drain Id25

70A Tc

Drainsource On Resistancemax

0.0072Ohm

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

79W Tc

Pulsed Drain Currentmax Idm

296A