Adet bazlı fiyat
- 1+ adet$0.87
- 10+ adet$0.82
- 100+ adet$0.78
- 500+ adet$0.73
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Case Connection
- DRAIN
- Jesd30 Code
- R-PSSO-G4
- Transistor Application
- SWITCHING
- Drive Voltage Max Rds On Min Rds On
- 5V
- Current Continuous Drain Id25
- 9.3A Tc
- Vgs Max
- ±10V
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Reference Standard
- AEC-Q101; IEC-60134
- Avalanche Energy Rating Eas
- 9.6 mJ
- Power Dissipation Max
- 36W Tc
- Pulsed Drain Currentmax Idm
- 37A
- Operating Mode
- ENHANCEMENT MODE
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.156Ohm
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Parça Durumu
- Active
- Vgsth Max Id
- 2.1V @ 1mA
- Fet Type
- N-Channel
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2016
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 9.3A
- Drain To Source Voltage Vdss
- 100V
- Rds On Max Id Vgs
- 150m Ω @ 5A, 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ds Breakdown Voltagemin
- 100V
- Input Capacitance Ciss Max Vds
- 695pF @ 25V
- Kılıf / Paket
- SOT-1210, 8-LFPAK33
- RoHS Durumu
- ROHS3 Compliant
- Terminal Pozisyonu
- SINGLE
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Number Of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Terminal Sayısı
- 4
- Fabrika Tedarik Süresi
- 26 Weeks
- Gate Charge Qg Max Vgs
- 7.4nC @ 5V
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