Adet bazlı fiyat
- 1+ adet$3.77
- 10+ adet$3.55
- 100+ adet$3.35
- 500+ adet$3.16
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Input Capacitance Ciss Max Vds
- 4293pF @ 25V
- Drain To Source Breakdown Voltage
- 100V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 27m Ω @ 25A, 10V
- Continuous Drain Current Id
- 49A
- Yüzey Montaj
- YES
- Turn On Delay Time
- 11 ns
- Terminal Formu
- GULL WING
- Element Configuration
- Single
- Transistor Element Material
- SILICON
- Power Dissipation
- 166W
- Yayın Yılı
- 2011
- Parça Durumu
- Active
- Vgsth Max Id
- 2V @ 1mA
- Fet Type
- N-Channel
- Fabrika Tedarik Süresi
- 12 Weeks
- Terminal Sayısı
- 2
- Number Of Elements
- 1
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Contact Plating
- Tin
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time Typ
- 106 ns
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Tepe Reflow Süresi (maks. sn)
- 40
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
- Jesd30 Code
- R-PSSO-G2
- Radyasyon Dayanımı
- No
- Case Connection
- DRAIN
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 3
- Drainsource On Resistancemax
- 0.028Ohm
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 58ns
- Turn Off Delay Time
- 250 ns
- Power Dissipation Max
- 166W Tc
- Max Dual Supply Voltage
- 100V
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