Adet bazlı fiyat
- 1+ adet$3.63
- 10+ adet$3.42
- 100+ adet$3.23
- 500+ adet$3.05
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Durumu
- ROHS3 Compliant
- Fall Time Typ
- 77 ns
- Fabrika Tedarik Süresi
- 12 Weeks
- REACH Uyumluluk Kodu
- not_compliant
- Gate Charge Qg Max Vgs
- 53.4nC @ 5V
- Number Of Elements
- 1
- Contact Plating
- Tin
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Terminal Sayısı
- 2
- Yayın Yılı
- 2009
- Transistor Element Material
- SILICON
- Power Dissipation
- 203W
- Element Configuration
- Single
- Fet Type
- N-Channel
- Vgsth Max Id
- 2V @ 1mA
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 18.5m Ω @ 25A, 10V
- Input Capacitance Ciss Max Vds
- 5657pF @ 25V
- Drain To Source Breakdown Voltage
- 100V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- GULL WING
- Turn On Delay Time
- 45 ns
- Yüzey Montaj
- YES
- Continuous Drain Current Id
- 63A
- Gate To Source Voltage Vgs
- 15V
- Avalanche Energy Rating Eas
- 222 mJ
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Current Continuous Drain Id25
- 63A Tc
- Vgs Max
- ±15V
- Rise Time
- 116ns
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 3
- Ambalaj
- Tape & Reel (TR)
- Max Dual Supply Voltage
- 100V
- Power Dissipation Max
- 203W Tc
- Turn Off Delay Time
- 173 ns
- Jesd30 Code
- R-PSSO-G2
- Pin Sayısı
- 3
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