Adet bazlı fiyat
- 1+ adet$1.86
- 10+ adet$1.76
- 100+ adet$1.66
- 500+ adet$1.56
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2010
- Family
- FETs - Single
- Fet Type
- N-Channel
- Montaj
- Through Hole
- Technology
- MOSFET (Metal Oxide)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 55V
- Input Capacitance Ciss Max Vds
- 1006pF @ 25V
- Rds On Max Id Vgs
- 40m Ω @ 5A, 10V
- Continuous Drain Current Id
- 175mA
- Drain To Source Voltage Vdss
- 55V
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Standard Package
- 1
- Fabrika Tedarik Süresi
- 26 Weeks
- Number Of Elements
- 1
- Contact Plating
- Tin
- Drain Currentmax Abs Id
- 28A
- Transistor Application
- SWITCHING
- Jesd30 Code
- R-PSSO-G2
- Jedec95 Code
- TO-252AA
- Fet Feature
- Logic Level Gate
- JESD-609 Kodu
- e3
- Tepe Reflow Süresi (maks. sn)
- 40
- Pcn Packaging
- DPAK Reel Leader Pockets 27/Sep/2013 Increase of Empty Pockets on Leader 08/Nov/2013
- Tepe Reflow Sıcaklığı (°C)
- 260
- Gate To Source Voltage Vgs
- 15V
- Current Continuous Drain Id25
- 28A Tc
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.05Ohm
- Pin Sayısı
- 3
- Rise Time
- 132ns
- Turn Off Delay Time
- 38 ns
- Element Configuration
- Single
- Power Dissipation
- 70W
- Parça Durumu
- Active
- Vgsth Max Id
- 2V @ 1mA
- Paket
- Bulk
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