BUK7Y9R9-80EX

Teknik Özellikler

Pin Sayısı

4

Transistor Application

SWITCHING

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Jedec95 Code

MO-235

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Current Continuous Drain Id25

89A Tc

Rise Time

23ns

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

4

Drainsource On Resistancemax

0.0099Ohm

Additional Feature

AVALANCHE RATED

Ambalaj

Tape & Reel (TR)

Max Dual Supply Voltage

80V

Turn Off Delay Time

34 ns

Power Dissipation Max

195W Tc

Yayın Yılı

2013

Transistor Element Material

SILICON

Power Dissipation

195W

Element Configuration

Single

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Parça Durumu

Active

Rds On Max Id Vgs

98m Ω @ 5A, 10V

Input Capacitance Ciss Max Vds

498pF @ 25V

Drain To Source Breakdown Voltage

80V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

15 ns

Terminal Formu

GULL WING

Yüzey Montaj

YES

Continuous Drain Current Id

89A

Kılıf / Paket

SC-100, SOT-669

RoHS Durumu

ROHS3 Compliant

Number Of Channels

1

Fall Time Typ

21 ns

Fabrika Tedarik Süresi

12 Weeks

Gate Charge Qg Max Vgs

51.6nC @ 10V