Adet bazlı fiyat
- 1+ adet$1.35
- 10+ adet$1.27
- 100+ adet$1.20
- 500+ adet$1.13
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Application
- SWITCHING
- Pin Sayısı
- 4
- Radyasyon Dayanımı
- No
- Kurşunsuz
- Lead Free
- Case Connection
- DRAIN
- JESD-609 Kodu
- e3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Gate To Source Voltage Vgs
- 20V
- Current Continuous Drain Id25
- 24.8A Tc
- Vgs Max
- ±20V
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.053Ohm
- Pin Sayısı
- 4
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 7.8ns
- Power Dissipation Max
- 85W Tc
- Pulsed Drain Currentmax Idm
- 99A
- Turn Off Delay Time
- 34 ns
- Max Dual Supply Voltage
- 100V
- Transistor Element Material
- SILICON
- Power Dissipation
- 85W
- Yayın Yılı
- 2010
- Parça Durumu
- Active
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 1467pF @ 25V
- Rds On Max Id Vgs
- 53m Ω @ 10A, 10V
- Continuous Drain Current Id
- 24.8A
- Yüzey Montaj
- YES
- Terminal Formu
- GULL WING
- Turn On Delay Time
- 15.3 ns
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- SC-100, SOT-669
- Fall Time Typ
- 7.7 ns
- Gate Charge Qg Max Vgs
- 22nC @ 10V
- Fabrika Tedarik Süresi
- 12 Weeks
- Terminal Sayısı
- 4
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