Adet bazlı fiyat
- 1+ adet$1.29
- 10+ adet$1.22
- 100+ adet$1.15
- 500+ adet$1.08
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 1800pF @ 25V
- Rds On Max Id Vgs
- 25m Ω @ 10A, 10V
- Continuous Drain Current Id
- 39A
- Terminal Formu
- GULL WING
- Turn On Delay Time
- 6.9 ns
- Yüzey Montaj
- YES
- Element Configuration
- Single
- Yayın Yılı
- 2013
- Transistor Element Material
- SILICON
- Power Dissipation
- 95W
- Fet Type
- N-Channel
- Vgsth Max Id
- 4V @ 1mA
- Parça Durumu
- Active
- Gate Charge Qg Max Vgs
- 25.9nC @ 10V
- Fabrika Tedarik Süresi
- 12 Weeks
- Terminal Sayısı
- 4
- Seri
- TrenchMOS™
- Number Of Elements
- 1
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- SC-100, SOT-669
- Fall Time Typ
- 10.5 ns
- Jedec95 Code
- MO-235
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 4
- Transistor Application
- SWITCHING
- Case Connection
- DRAIN
- Drainsource On Resistancemax
- 0.025Ohm
- Pin Sayısı
- 4
- Additional Feature
- AVALANCHE RATED
- Ambalaj
- Tape & Reel (TR)
- Rise Time
- 9.2ns
- Operating Mode
- ENHANCEMENT MODE
- Max Dual Supply Voltage
- 80V
- Power Dissipation Max
- 95W Tc
- Turn Off Delay Time
- 17.5 ns
- Gate To Source Voltage Vgs
- 20V
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Current Continuous Drain Id25
- 39A Tc
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