BUK7M19-60EX

Teknik Özellikler

Jesd30 Code

R-PSSO-G4

Transistor Application

SWITCHING

Drain Currentmax Abs Id

36A

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Avalanche Energy Rating Eas

21.1 mJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Reference Standard

AEC-Q101; IEC-60134

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Current Continuous Drain Id25

35.8A Tc

Vgs Max

±20V

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.019Ohm

Pin Sayısı

8

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

55W Tc

Pulsed Drain Currentmax Idm

143A

Yayın Yılı

2016

Transistor Element Material

SILICON

Montaj

Surface Mount

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Parça Durumu

Active

Rds On Max Id Vgs

19m Ω @ 10A, 10V

Input Capacitance Ciss Max Vds

1055pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

60V

Terminal Formu

GULL WING

Drain To Source Voltage Vdss

60V

Continuous Drain Current Id

35.8A

Kılıf / Paket

SOT-1210, 8-LFPAK33

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

26 Weeks

Gate Charge Qg Max Vgs

17.3nC @ 10V

Terminal Pozisyonu

SINGLE

Seri

Automotive, AEC-Q101, TrenchMOS™

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE