BUK7M12-60EX

Teknik Özellikler

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Jesd30 Code

R-PSSO-G4

Transistor Application

SWITCHING

Drain Currentmax Abs Id

53A

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Drainsource On Resistancemax

0.012Ohm

Power Dissipation Max

75W Tc

Pulsed Drain Currentmax Idm

211A

Reference Standard

AEC-Q101; IEC-60134

Avalanche Energy Rating Eas

34.3 mJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Continuous Drain Id25

53A Tc

Vgs Max

±20V

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

12m Ω @ 15A, 10V

Ds Breakdown Voltagemin

60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

1625pF @ 25V

Yüzey Montaj

YES

Terminal Formu

GULL WING

Drain To Source Voltage Vdss

60V

Transistor Element Material

SILICON

Yayın Yılı

2016

Parça Durumu

Active

Fet Type

N-Channel

Vgsth Max Id

4V @ 1mA

Fabrika Tedarik Süresi

26 Weeks

Gate Charge Qg Max Vgs

24.8nC @ 10V

Seri

Automotive, AEC-Q101

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

4

Kılıf / Paket

SOT-1210, 8-LFPAK33

RoHS Durumu

ROHS3 Compliant