BUK7E5R2-100E,127

Teknik Özellikler

Gate Charge Qg Max Vgs

180nC @ 10V

Terminal Kaplaması

Tin (Sn)

Fabrika Tedarik Süresi

12 Weeks

Terminal Sayısı

3

Number Of Elements

1

Seri

Automotive, AEC-Q101, TrenchMOS™

RoHS Durumu

ROHS3 Compliant

Weight

2.299997g

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Fall Time Typ

80 ns

Number Of Channels

1

Input Capacitance Ciss Max Vds

11810pF @ 25V

Drain To Source Breakdown Voltage

100V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

5.2m Ω @ 25A, 10V

Continuous Drain Current Id

120A

Yüzey Montaj

NO

Turn On Delay Time

37 ns

Element Configuration

Single

Transistor Element Material

SILICON

Yayın Yılı

2012

Parça Durumu

Obsolete

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Ambalaj

Tube

Additional Feature

AVALANCHE RATED

Pin Sayısı

3

Drainsource On Resistancemax

0.0052Ohm

Operating Mode

ENHANCEMENT MODE

Rise Time

62ns

Turn Off Delay Time

158 ns

Power Dissipation Max

349W Tc

Max Dual Supply Voltage

100V

Gate To Source Voltage Vgs

20V

Current Continuous Drain Id25

120A Tc

Vgs Max

±20V

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~175°C TJ

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

10V