BUK768R1-100E,118

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time Typ

49.6 ns

Gate Charge Qg Max Vgs

108nC @ 10V

Terminal Kaplaması

Tin (Sn)

REACH Uyumluluk Kodu

not_compliant

Fabrika Tedarik Süresi

12 Weeks

Terminal Sayısı

2

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Seri

Automotive, AEC-Q101, TrenchMOS™

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Power Dissipation

263W

Yayın Yılı

2012

Parça Durumu

Active

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

7380pF @ 25V

Drain To Source Breakdown Voltage

100V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

8.1m Ω @ 25A, 10V

Continuous Drain Current Id

100A

Yüzey Montaj

YES

Turn On Delay Time

23.5 ns

Terminal Formu

GULL WING

Avalanche Energy Rating Eas

219 mJ

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Current Continuous Drain Id25

100A Tc

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Additional Feature

AVALANCHE RATED

Drainsource On Resistancemax

0.0081Ohm

Pin Sayısı

3

Operating Mode

ENHANCEMENT MODE

Rise Time

44.1ns

Power Dissipation Max

263W Tc

Turn Off Delay Time

72 ns