BUK766R0-60E,118

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

JESD-609 Kodu

e3

Jesd30 Code

R-PSSO-G2

Pin Sayısı

3

Transistor Application

SWITCHING

Case Connection

DRAIN

Rise Time

36ns

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Drainsource On Resistancemax

0.006Ohm

Ambalaj

Tape & Reel (TR)

Additional Feature

AVALANCHE RATED

Max Dual Supply Voltage

60V

Turn Off Delay Time

38 ns

Power Dissipation Max

182W Tc

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Current Continuous Drain Id25

75A Tc

Vgs Max

±20V

Rds On Max Id Vgs

6m Ω @ 25A, 10V

Input Capacitance Ciss Max Vds

4520pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

19 ns

Terminal Formu

GULL WING

Yüzey Montaj

YES

Continuous Drain Current Id

75A

Yayın Yılı

2014

Power Dissipation

182W

Transistor Element Material

SILICON

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Parça Durumu

Active

Fabrika Tedarik Süresi

12 Weeks

Gate Charge Qg Max Vgs

62nC @ 10V

REACH Uyumluluk Kodu

not_compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Seri

Automotive, AEC-Q101, TrenchMOS™

Contact Plating

Tin