Adet bazlı fiyat
- 1+ adet$3.13
- 10+ adet$2.95
- 100+ adet$2.79
- 500+ adet$2.63
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Jesd30 Code
- R-PSSO-G2
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Transistor Application
- SWITCHING
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 10V
- JESD-609 Kodu
- e3
- Gate To Source Voltage Vgs
- 20V
- HTS Kodu
- 8541.29.00.75
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Surface Mount
- Current Continuous Drain Id25
- 37A Tc
- Vgs Max
- ±20V
- Rise Time
- 55ns
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 3
- Drainsource On Resistancemax
- 0.04Ohm
- Ambalaj
- Tape & Reel (TR)
- Max Dual Supply Voltage
- 100V
- Power Dissipation Max
- 138W Tc
- Turn Off Delay Time
- 48 ns
- Pulsed Drain Currentmax Idm
- 149A
- Yayın Yılı
- 2011
- Transistor Element Material
- SILICON
- Power Dissipation
- 138W
- Element Configuration
- Single
- Montaj
- Through Hole
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 40m Ω @ 25A, 10V
- Input Capacitance Ciss Max Vds
- 2293pF @ 25V
- Drain To Source Breakdown Voltage
- 100V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 12 ns
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 900mA
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
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