Adet bazlı fiyat
- 1+ adet$0.30
- 10+ adet$0.29
- 100+ adet$0.27
- 500+ adet$0.25
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- JESD-609 Kodu
- e3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Jesd30 Code
- R-PSSO-G2
- Case Connection
- DRAIN
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 3
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 66ns
- Turn Off Delay Time
- 61 ns
- Power Dissipation Max
- 138W Tc
- Max Dual Supply Voltage
- 75V
- Gate To Source Voltage Vgs
- 20V
- Vgs Max
- ±20V
- Current Continuous Drain Id25
- 53A Tc
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 75V
- Input Capacitance Ciss Max Vds
- 2385pF @ 25V
- Rds On Max Id Vgs
- 23m Ω @ 25A, 10V
- Continuous Drain Current Id
- 1.1A
- Turn On Delay Time
- 14 ns
- Terminal Formu
- GULL WING
- Element Configuration
- Single
- Transistor Element Material
- SILICON
- Power Dissipation
- 138W
- Yayın Yılı
- 1997
- Parça Durumu
- Obsolete
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- N-Channel
- Montaj
- Through Hole
- Fabrika Tedarik Süresi
- 16 Weeks
- Terminal Sayısı
- 2
- Number Of Elements
- 1
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Contact Plating
- Tin
- RoHS Durumu
- ROHS3 Compliant
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