Adet bazlı fiyat
- 1+ adet$2.26
- 10+ adet$2.13
- 100+ adet$2.01
- 500+ adet$1.90
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Turn Off Delay Time
- 100 ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Number Of Elements
- 1
- Drive Voltage Max Rds On Min Rds On
- 10V
- Input Capacitance Ciss Max Vds
- 4352pF @ 25V
- JESD-609 Kodu
- e3
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Type
- N-Channel
- Power Dissipation Max
- 254W Tc
- Vgs Max
- ±20V
- Element Configuration
- Single
- Yüzey Montaj
- NO
- Drain Currentmax Abs Id
- 75A
- Montaj Tipi
- Through Hole
- Seri
- TrenchMOS™
- Rise Time
- 94ns
- Transistor Application
- SWITCHING
- Parça Durumu
- Obsolete
- Contact Plating
- Tin
- Pulsed Drain Currentmax Idm
- 504A
- Drainsource On Resistancemax
- 0.008Ohm
- Case Connection
- DRAIN
- Jedec95 Code
- TO-220AB
- Gate To Source Voltage Vgs
- 20V
- Max Dual Supply Voltage
- 55V
- Rds On Max Id Vgs
- 8m Ω @ 25A, 10V
- Current Continuous Drain Id25
- 75A Tc
- Yayın Yılı
- 2010
- Kılıf / Paket
- TO-220-3
- Continuous Drain Current Id
- 126A
- Terminal Sayısı
- 3
- Turn On Delay Time
- 24 ns
- RoHS Durumu
- RoHS Compliant
- Vgsth Max Id
- 4V @ 1mA
- ECCN Kodu
- EAR99
- Power Dissipation
- 254W
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