BSS84,215

Teknik Özellikler

Pin Sayısı

3

Yüzey Montaj

YES

Power Dissipation Max

250mW Tc

Ambalaj

Tape & Reel (TR)

Power Dissipation

250mW

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

P-Channel

Vgs Max

±20V

Çalışma Sıcaklığı

-65°C~150°C TJ

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Fabrika Tedarik Süresi

4 Weeks

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Max Junction Temperature Tj

150°C

ECCN Kodu

EAR99

Yayın Yılı

2008

Terminal Sayısı

3

Vgsth Max Id

2V @ 1mA

Terminal Kaplaması

Tin (Sn)

Parça Durumu

Active

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Yükseklik

1.1mm

Montaj Tipi

Surface Mount

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

45pF @ 25V

Number Of Channels

1

Terminal Formu

GULL WING

Turn On Delay Time

3 ns

Additional Feature

LOGIC LEVEL COMPATIBLE

Rds On Max Id Vgs

10 Ω @ 130mA, 10V

Drain To Source Voltage Vdss

50V

Drive Voltage Max Rds On Min Rds On

10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

-130mA

Current Continuous Drain Id25

130mA Ta

Pin Sayısı

3