2N7002CK,215

Teknik Özellikler

Rds On Max Id Vgs

1.6 Ω @ 500mA, 10V

Jesd30 Code

R-PDSO-G3

Vgsth Max Id

2.5V @ 250μA

Terminal Pozisyonu

DUAL

Current Continuous Drain Id25

300mA Ta

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Drain Currentmax Abs Id

0.3A

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Transistor Element Material

SILICON

Yayın Yılı

2009

Pin Sayısı

3

Reference Standard

IEC-60134

Power Dissipation Max

350mW Ta

Parça Durumu

Active

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

60V

Feedback Capmax Crss

7.5 pF

Terminal Kaplaması

Tin (Sn)

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

150°C TJ

Fet Type

N-Channel

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-236AB

Gate Charge Qg Max Vgs

1.3nC @ 4.5V

Fabrika Tedarik Süresi

4 Weeks

Additional Feature

LOGIC LEVEL COMPATIBLE

Seri

Automotive, AEC-Q101, TrenchMOS™

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

60V

Input Capacitance Ciss Max Vds

55pF @ 25V