2N7002BKW,115

Teknik Özellikler

Fet Type

N-Channel

Çalışma Sıcaklığı

150°C TJ

Ambalaj

Tape & Reel (TR)

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3

Ds Breakdown Voltagemin

60V

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

4 Weeks

Gate Charge Qg Max Vgs

0.6nC @ 4.5V

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

50pF @ 10V

Drain To Source Voltage Vdss

60V

Drive Voltage Max Rds On Min Rds On

10V

Seri

Automotive, AEC-Q101, TrenchMOS™

Additional Feature

LOGIC LEVEL COMPATIBLE

Terminal Formu

GULL WING

RoHS Durumu

ROHS3 Compliant

Vgs Max

±20V

Drain Currentmax Abs Id

0.31A

Yüzey Montaj

YES

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Pozisyonu

DUAL

Vgsth Max Id

2.1V @ 250μA

Jesd30 Code

R-PDSO-G3

Rds On Max Id Vgs

1.6 Ω @ 500mA, 10V

Current Continuous Drain Id25

310mA Ta

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

1.2A

Kılıf / Paket

SC-70, SOT-323

Power Dissipation Max

275mW Ta

Parça Durumu

Active

Transistor Element Material

SILICON

Yayın Yılı

2010

Pin Sayısı

3