2N7002BKVL

Teknik Özellikler

Ds Breakdown Voltagemin

60V

Terminal Sayısı

3

Fet Type

N-Channel

Çalışma Sıcaklığı

150°C TJ

Ambalaj

Tape & Reel (TR)

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

50pF @ 10V

Drain To Source Voltage Vdss

60V

Drive Voltage Max Rds On Min Rds On

5V 10V

Seri

Automotive, AEC-Q101, TrenchMOS™

Additional Feature

LOGIC LEVEL COMPATIBLE

Fabrika Tedarik Süresi

4 Weeks

Gate Charge Qg Max Vgs

0.6nC @ 4.5V

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-236AB

Transistor Application

SWITCHING

Current Continuous Drain Id25

350mA Ta

Terminal Pozisyonu

DUAL

Vgsth Max Id

2.1V @ 250μA

Jesd30 Code

R-PDSO-G3

Rds On Max Id Vgs

1.6 Ω @ 500mA, 10V

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Drain Currentmax Abs Id

0.35A

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Active

Power Dissipation Max

370mW Ta

Reference Standard

AEC-Q101; IEC-60134

Pin Sayısı

3

Transistor Element Material

SILICON

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1