2SK2159

Teknik Özellikler

Ds Breakdown Voltagemin

60 V

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

3

Polaritychannel Type

N-CHANNEL

Additional Feature

GATE PROTECTED

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Package Shape

RECTANGULAR

Qualification Status

Not Qualified

JESD-609 Kodu

e0

Üretici Parça No

2SK2159

Risk Rank

5.31

Drain Currentmax Id

2 A

Drain Currentmax Abs Id

2 A

Yüzey Montaj

YES

Operating Temperaturemax

150 °C

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Package Body Material

PLASTIC/EPOXY

Case Connection

DRAIN

Pulsed Drain Currentmax Idm

4 A

Rohs Code

No

Package Style

SMALL OUTLINE

ECCN Kodu

EAR99

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Drainsource On Resistancemax

0.5 Ω

Pin Sayısı

3

Terminal Formu

FLAT

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

unknown

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Package Description

SMALL OUTLINE, R-PSSO-F3

Power Dissipationmax Abs

2 W

Transistor Application

SWITCHING

Part Life Cycle Code

Obsolete

Jesd30 Code

R-PSSO-F3

Reflow Temperaturemax S

NOT SPECIFIED