2SJ358

Teknik Özellikler

Number Of Terminals

3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

60 V

Package Shape

RECTANGULAR

JESD-609 Kodu

e0

Üretici Parça No

2SJ358

Qualification Status

Not Qualified

Polaritychannel Type

P-CHANNEL

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

3 A

Risk Rank

5.33

Package Body Material

PLASTIC/EPOXY

Case Connection

DRAIN

Pulsed Drain Currentmax Idm

6 A

Drain Currentmax Abs Id

3 A

Yüzey Montaj

YES

Operating Temperaturemax

150 °C

Number Of Elements

1

Terminal Pozisyonu

SINGLE

ECCN Kodu

EAR99

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Drainsource On Resistancemax

0.4 Ω

Rohs Code

No

Package Style

SMALL OUTLINE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

3

Terminal Formu

FLAT

Package Description

SMALL OUTLINE, R-PSSO-F3

Power Dissipationmax Abs

2 W

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

unknown

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Reflow Temperaturemax S

NOT SPECIFIED

Jesd30 Code

R-PSSO-F3

Part Life Cycle Code

Obsolete