VP2106N3-G

Teknik Özellikler

Fet Type

P-Channel

Drain Currentmax Abs Id

0.25A

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Contact Plating

Tin

Vgsth Max Id

3.5V @ 1mA

Additional Feature

HIGH INPUT IMPEDANCE

Turn Off Delay Time

5 ns

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Operating Mode

ENHANCEMENT MODE

Weight

453.59237mg

Yükseklik

5.33mm

Feedback Capmax Crss

8 pF

Drain To Source Voltage Vdss

60V

Drive Voltage Max Rds On Min Rds On

5V 10V

Drain To Source Breakdown Voltage

-60V

Terminal Pozisyonu

BOTTOM

Rise Time

5ns

RoHS Durumu

ROHS3 Compliant

Uzunluk

5.21mm

Input Capacitance Ciss Max Vds

60pF @ 25V

Continuous Drain Current Id

250mA

Number Of Channels

1

Power Dissipation

740mW

Yayın Yılı

2006

Montaj Tipi

Through Hole

Power Dissipation Max

1W Tc

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Bulk

Current Continuous Drain Id25

250mA Tj

Vgs Max

±20V

Rds On Max Id Vgs

12 Ω @ 500mA, 10V

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Genişlik

4.19mm

Pin Sayısı

3

Parça Durumu

Active

ECCN Kodu

EAR99

Transistor Element Material

SILICON