VP0106N3-G

Teknik Özellikler

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

5V 10V

Turn Off Delay Time

8 ns

Number Of Channels

1

Rds On Max Id Vgs

8 Ω @ 500mA, 10V

Vgs Max

±20V

Terminal Pozisyonu

BOTTOM

Genişlik

4.19mm

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Element Configuration

Single

Power Dissipation

740mW

Fall Time Typ

4 ns

Yükseklik

5.33mm

Terminal Kaplaması

Matte Tin (Sn)

Montaj Tipi

Through Hole

Drainsource On Resistancemax

8Ohm

Pin Sayısı

3

Turn On Delay Time

4 ns

Number Of Elements

1

Transistor Element Material

SILICON

Fet Type

P-Channel

Drain To Source Breakdown Voltage

-60V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Abs Id

0.25A

Power Dissipation Max

1W Tc

Drain To Source Voltage Vdss

60V

Continuous Drain Current Id

250mA

Rise Time

5ns

Uzunluk

5.21mm

Weight

453.59237mg

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Montaj

Through Hole

Ambalaj

Bulk

Current Continuous Drain Id25

250mA Tj

RoHS Durumu

ROHS3 Compliant

Feedback Capmax Crss

8 pF

Transistor Application

SWITCHING

Vgsth Max Id

3.5V @ 1mA