VP0104N3-G

Teknik Özellikler

Terminal Pozisyonu

BOTTOM

Rds On Max Id Vgs

8 Ω @ 500mA, 10V

Vgs Max

±20V

Number Of Channels

1

Power Dissipation

1W

Fall Time Typ

4 ns

Element Configuration

Single

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Genişlik

4.19mm

Turn Off Delay Time

8 ns

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

5V 10V

Transistor Element Material

SILICON

Turn On Delay Time

4 ns

Number Of Elements

1

Fet Type

P-Channel

Montaj Tipi

Through Hole

Drainsource On Resistancemax

8Ohm

Yükseklik

5.33mm

Terminal Kaplaması

Matte Tin (Sn)

Pin Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Weight

453.59237mg

Terminal Sayısı

3

Montaj

Through Hole

Parça Durumu

Active

Drain Currentmax Abs Id

0.25A

Power Dissipation Max

1W Tc

Drain To Source Breakdown Voltage

-40V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

5.21mm

Rise Time

3ns

Drain To Source Voltage Vdss

40V

Continuous Drain Current Id

250mA

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

60pF @ 25V

Gate To Source Voltage Vgs

20V

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant