VN2224N3-G

Teknik Özellikler

Transistor Application

SWITCHING

Terminal Sayısı

3

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

5V 10V

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Element Configuration

Single

Input Capacitance Ciss Max Vds

350pF @ 25V

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Fet Type

N-Channel

Current Continuous Drain Id25

540mA Tj

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Breakdown Voltage

240V

Turn Off Delay Time

65 ns

Weight

453.59237mg

Yayın Yılı

2013

Rds On Max Id Vgs

1.25 Ω @ 2A, 10V

Power Dissipation

1W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Bulk

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Radyasyon Dayanımı

No

Number Of Channels

1

ECCN Kodu

EAR99

Turn On Delay Time

6 ns

Transistor Element Material

SILICON

Continuous Drain Current Id

540mA

Pin Sayısı

3

Power Dissipation Max

1W Tc

Drain Currentmax Abs Id

0.54A

Fabrika Tedarik Süresi

20 Weeks

Terminal Pozisyonu

BOTTOM

Vgsth Max Id

3V @ 5mA

Montaj Tipi

Through Hole

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Through Hole