VN0550N3-G

Teknik Özellikler

Element Configuration

Single

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Input Capacitance Ciss Max Vds

55pF @ 25V

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Terminal Sayısı

3

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

5V 10V

Turn Off Delay Time

10 ns

Drain To Source Breakdown Voltage

500V

Yayın Yılı

2013

Weight

453.59237mg

Power Dissipation

1W

Rds On Max Id Vgs

60 Ω @ 50mA, 10V

Ambalaj

Bulk

Fall Time Typ

10 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N-Channel

Current Continuous Drain Id25

50mA Tj

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Feedback Capmax Crss

5 pF

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Turn On Delay Time

10 ns

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Terminal Formu

WIRE

Rise Time

15ns

Radyasyon Dayanımı

No

Number Of Channels

1

Terminal Pozisyonu

BOTTOM

Fabrika Tedarik Süresi

5 Weeks

Terminal Kaplaması

Matte Tin (Sn)

Yükseklik

5.33mm

Vgsth Max Id

4V @ 1mA

Montaj Tipi

Through Hole

Montaj

Through Hole