VN0300L-G

Teknik Özellikler

JESD-609 Kodu

e3

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

5V 10V

Transistor Application

SWITCHING

Terminal Sayısı

3

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Element Configuration

Single

Input Capacitance Ciss Max Vds

190pF @ 20V

Parça Durumu

Active

Current Continuous Drain Id25

640mA Tj

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

N-Channel

Rds On Max Id Vgs

1.2 Ω @ 1A, 10V

Power Dissipation

1W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Bulk

Drain To Source Breakdown Voltage

30V

Weight

453.59237mg

Yayın Yılı

2013

Radyasyon Dayanımı

No

Number Of Channels

1

Vgs Max

±30V

Gate To Source Voltage Vgs

30V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Feedback Capmax Crss

50 pF

Additional Feature

LOW THRESHOLD

Continuous Drain Current Id

640mA

Uzunluk

5.21mm

Pin Sayısı

3

Power Dissipation Max

1W Tc

Genişlik

4.19mm

Drain Currentmax Abs Id

0.64A

Montaj Tipi

Through Hole

Vgsth Max Id

2.5V @ 1mA

Yükseklik

5.33mm

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Through Hole