VN0106N3-G

Teknik Özellikler

Terminal Sayısı

3

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

5V 10V

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

65pF @ 25V

Element Configuration

Single

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Fet Type

N-Channel

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

350mA Tj

Parça Durumu

Active

Yayın Yılı

2013

Weight

453.59237mg

Turn Off Delay Time

6 ns

Drain To Source Breakdown Voltage

60V

Ambalaj

Bulk

Fall Time Typ

5 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

1W

Rds On Max Id Vgs

3 Ω @ 1A, 10V

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Number Of Channels

1

Radyasyon Dayanımı

No

Rise Time

5ns

Feedback Capmax Crss

8 pF

Drainsource On Resistancemax

3Ohm

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Turn On Delay Time

3 ns

Genişlik

4.19mm

Power Dissipation Max

1W Tc

Continuous Drain Current Id

350mA

Pin Sayısı

3

Uzunluk

5.21mm

Additional Feature

HIGH INPUT IMPEDANCE