VN0104N3-G

Teknik Özellikler

Transistor Application

SWITCHING

Terminal Sayısı

3

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

5V 10V

Element Configuration

Single

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Input Capacitance Ciss Max Vds

65pF @ 25V

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Current Continuous Drain Id25

350mA Tj

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn Off Delay Time

6 ns

Drain To Source Breakdown Voltage

40V

Yayın Yılı

2013

Weight

219.992299mg

Power Dissipation

1W

Rds On Max Id Vgs

3 Ω @ 1A, 10V

Ambalaj

Bulk

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Radyasyon Dayanımı

No

Number Of Channels

1

Feedback Capmax Crss

8 pF

Drainsource On Resistancemax

3Ohm

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Turn On Delay Time

3 ns

Pin Sayısı

3

Continuous Drain Current Id

350mA

Drain Currentmax Abs Id

0.5A

Power Dissipation Max

1W Tc

Additional Feature

HIGH INPUT IMPEDANCE

Terminal Pozisyonu

BOTTOM

Fabrika Tedarik Süresi

2 Weeks

Terminal Kaplaması

Matte Tin (Sn)

Vgsth Max Id

2.4V @ 1mA