TP5335K1-G

Teknik Özellikler

ECCN Kodu

EAR99

Rds On Max Id Vgs

30 Ω @ 200mA, 10V

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Sıcaklığı (°C)

260

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

40

Yayın Yılı

2013

Drain Currentmax Abs Id

0.085A

Continuous Drain Current Id

-85mA

Additional Feature

LOW THRESHOLD

Power Dissipation

360mW

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

-350V

Fet Type

P-Channel

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Çalışma Sıcaklığı

-55°C~150°C

Gate To Source Voltage Vgs

20V

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Matte Tin (Sn) - annealed

Drain To Source Voltage Vdss

350V

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Fall Time Typ

15 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Feedback Capmax Crss

22 pF

Qualification Status

Not Qualified

Current Continuous Drain Id25

85mA Tj

Weight

1.437803g

Rise Time

15ns

Fabrika Tedarik Süresi

20 Weeks

Turn On Delay Time

20 ns

Parça Durumu

Active

Turn Off Delay Time

25 ns

Montaj

Surface Mount

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Junction Temperature Tj

150°C

Pin Sayısı

3

Number Of Channels

1