TP5322N8-G

Teknik Özellikler

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

220V

Transistor Application

SWITCHING

Terminal Kaplaması

Matte Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

0.9A

Kılıf / Paket

TO-243AA

Fet Type

P-Channel

Parça Durumu

Active

Turn On Delay Time

10 ns

Fabrika Tedarik Süresi

18 Weeks

Jesd30 Code

R-PSSO-F3

Rise Time

15ns

Weight

52.786812mg

Current Continuous Drain Id25

260mA Tj

Qualification Status

Not Qualified

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

15 ns

Yayın Yılı

2013

Drain Currentmax Abs Id

0.26A

Montaj Tipi

Surface Mount

Tepe Reflow Süresi (maks. sn)

40

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

260

RoHS Durumu

ROHS3 Compliant

Rds On Max Id Vgs

12 Ω @ 200mA, 10V

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

-220V

JESD-609 Kodu

e3

Power Dissipation

1.6W

Additional Feature

LOGIC LEVEL COMPATIBLE

Continuous Drain Current Id

-260mA

Terminal Sayısı

3

Operating Mode

ENHANCEMENT MODE

Uzunluk

4.6mm

Vgs Max

±20V

Yükseklik

1.6mm

Input Capacitance Ciss Max Vds

110pF @ 25V

Genişlik

2.6mm