TP2535N3-G

Teknik Özellikler

Power Dissipation

740mW

Qualification Status

Not Qualified

Rds On Max Id Vgs

25 Ω @ 100mA, 10V

Fall Time Typ

10 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

-350V

Weight

453.59237mg

Current Continuous Drain Id25

86mA Tj

Fet Type

P-Channel

Input Capacitance Ciss Max Vds

125pF @ 25V

JESD-609 Kodu

e3

Terminal Sayısı

3

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Through Hole

Terminal Pozisyonu

BOTTOM

Fabrika Tedarik Süresi

5 Weeks

Uzunluk

5.21mm

Continuous Drain Current Id

-86mA

Genişlik

4.19mm

Drain Currentmax Abs Id

0.086A

Power Dissipation Max

740mW Ta

Turn On Delay Time

10 ns

Number Of Channels

1

Gate To Source Voltage Vgs

20V

Tepe Reflow Süresi (maks. sn)

NOT APPLICABLE

Ambalaj

Bulk

Turn Off Delay Time

20 ns

Yayın Yılı

2013

Parça Durumu

Active

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Transistor Application

SWITCHING

Yükseklik

5.33mm

Drain To Source Voltage Vdss

350V

Montaj Tipi

Through Hole