TP2522N8-G

Teknik Özellikler

Input Capacitance Ciss Max Vds

125pF @ 25V

Case Connection

DRAIN

JESD-609 Kodu

e3

Terminal Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

15 ns

Rds On Max Id Vgs

12 Ω @ 200mA, 10V

Power Dissipation

1.6W

Qualification Status

Not Qualified

Weight

52.786812mg

Drain To Source Breakdown Voltage

-220V

Current Continuous Drain Id25

260mA Tj

Fet Type

P-Channel

Turn On Delay Time

10 ns

Number Of Channels

1

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

2A

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn)

Fabrika Tedarik Süresi

15 Weeks

Power Dissipation Max

1.6W Ta

Drain Currentmax Abs Id

0.26A

Genişlik

2.6mm

Continuous Drain Current Id

-260mA

Uzunluk

4.6mm

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Kılıf / Paket

TO-243AA

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

40

Yayın Yılı

2013

Turn Off Delay Time

20 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Direnç

12Ohm

Transistor Element Material

SILICON