TP2502N8-G

Teknik Özellikler

Input Capacitance Ciss Max Vds

125pF @ 20V

Case Connection

DRAIN

JESD-609 Kodu

e3

Terminal Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

11 ns

Rds On Max Id Vgs

2 Ω @ 1A, 10V

Power Dissipation

1.6W

Qualification Status

Not Qualified

Weight

52.786812mg

Drain To Source Breakdown Voltage

-20V

Current Continuous Drain Id25

630mA Tj

Fet Type

P-Channel

Turn On Delay Time

10 ns

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

3.3A

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn)

Fabrika Tedarik Süresi

6 Weeks

Power Dissipation Max

1.6W Ta

Genişlik

2.6mm

Drain Currentmax Abs Id

0.63A

Uzunluk

4.6mm

Continuous Drain Current Id

630mA

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Kılıf / Paket

TO-243AA

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

5V 10V

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

40

Yayın Yılı

2008

Turn Off Delay Time

15 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Jesd30 Code

R-PSSO-F3