TP2104N3-G

Teknik Özellikler

Fabrika Tedarik Süresi

6 Weeks

Terminal Pozisyonu

BOTTOM

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Through Hole

Uzunluk

5.21mm

Continuous Drain Current Id

-250mA

Power Dissipation Max

740mW Ta

Genişlik

4.19mm

Turn On Delay Time

4 ns

Gate To Source Voltage Vgs

20V

Number Of Channels

1

Drain To Source Breakdown Voltage

-40V

Weight

453.59237mg

Rds On Max Id Vgs

6 Ω @ 500mA, 10V

Power Dissipation

740mW

Qualification Status

Not Qualified

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

4 ns

Fet Type

P-Channel

Current Continuous Drain Id25

175mA Tj

Input Capacitance Ciss Max Vds

60pF @ 25V

Terminal Sayısı

3

JESD-609 Kodu

e3

Yükseklik

5.33mm

Drain To Source Voltage Vdss

40V

Montaj Tipi

Through Hole

Vgsth Max Id

2V @ 1mA

Pin Sayısı

3

Additional Feature

LOW THRESHOLD

Tepe Reflow Sıcaklığı (°C)

NOT APPLICABLE

ECCN Kodu

EAR99

Drainsource On Resistancemax

6Ohm

Transistor Element Material

SILICON

Vgs Max

±20V

Rise Time

4ns

Turn Off Delay Time

5 ns

Yayın Yılı

2013

Tepe Reflow Süresi (maks. sn)

NOT APPLICABLE

Ambalaj

Bulk

Kurşunsuz

Lead Free