TN5335N8-G

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

3V 10V

Kılıf / Paket

TO-243AA

Number Of Channels

1

Additional Feature

LOGIC LEVEL COMPATIBLE

Weight

52.786812mg

Vgsth Max Id

2V @ 1mA

Vgs Max

±20V

Turn Off Delay Time

25 ns

Yükseklik

1.6mm

Uzunluk

4.6mm

Continuous Drain Current Id

230mA

Tepe Reflow Sıcaklığı (°C)

260

Element Configuration

Single

Case Connection

DRAIN

Rds On Max Id Vgs

15 Ω @ 200mA, 10V

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Rise Time

15ns

Fall Time Typ

15 ns

Terminal Formu

FLAT

Drain To Source Breakdown Voltage

350V

Input Capacitance Ciss Max Vds

110pF @ 25V

Fabrika Tedarik Süresi

18 Weeks

Jesd30 Code

R-PSSO-F3

Montaj

Surface Mount

Turn On Delay Time

20 ns

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Power Dissipation

1.6W

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

40

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Yayın Yılı

2013

Terminal Kaplaması

Matte Tin (Sn)

Transistor Element Material

SILICON

Transistor Application

SWITCHING