TN5325K1-G

Teknik Özellikler

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

15 ns

Drain To Source Breakdown Voltage

250V

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

7 Ω @ 1A, 10V

Rise Time

15ns

Continuous Drain Current Id

150mA

Uzunluk

2.9mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TA

Transistor Element Material

SILICON

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

40

Fet Type

N-Channel

Turn On Delay Time

20 ns

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

18 Weeks

Input Capacitance Ciss Max Vds

110pF @ 25V

Montaj

Surface Mount

Drainsource On Resistancemax

7Ohm

Weight

1.437803g

Vgsth Max Id

2V @ 1mA

Terminal Pozisyonu

DUAL

Turn Off Delay Time

25 ns

Number Of Channels

1

Additional Feature

LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Terminal Formu

GULL WING

Kurşunsuz

Lead Free

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

260

Yükseklik

950μm

Element Configuration

Single

Terminal Kaplaması

Matte Tin (Sn)

Yayın Yılı

2009

Power Dissipation

360mW