TN2540N8-G

Teknik Özellikler

Drain Currentmax Abs Id

0.57A

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

40

Parça Durumu

Active

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Surface Mount

Fabrika Tedarik Süresi

2 Weeks

Input Capacitance Ciss Max Vds

125pF @ 25V

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Turn On Delay Time

20 ns

Rise Time

15ns

Rds On Max Id Vgs

12 Ω @ 500mA, 10V

Montaj Tipi

Surface Mount

Drain To Source Breakdown Voltage

400V

Contact Plating

Tin

Fall Time Typ

15 ns

Uzunluk

4.6mm

Continuous Drain Current Id

260mA

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Genişlik

2.6mm

Current Continuous Drain Id25

260mA Tj

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Power Dissipation Max

1.6W Ta

Power Dissipation

1.6W

Yayın Yılı

2013

Pin Sayısı

4

Jesd30 Code

R-PSSO-F3

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Terminal Formu

FLAT

Element Configuration

Single