TN2501N8-G

Teknik Özellikler

Pulsed Drain Currentmax Idm

0.56A

Drive Voltage Max Rds On Min Rds On

1.2V 3V

Vgs Max

±20V

Continuous Drain Current Id

400mA

Uzunluk

4.6mm

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

2.5 Ω @ 200mA, 3V

Rise Time

15ns

Fall Time Typ

15 ns

Drain To Source Breakdown Voltage

18V

Fabrika Tedarik Süresi

6 Weeks

Input Capacitance Ciss Max Vds

110pF @ 15V

Montaj

Surface Mount

Turn On Delay Time

5 ns

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

40

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Kılıf / Paket

TO-243AA

Number Of Channels

1

Additional Feature

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

Vgsth Max Id

1V @ 1mA

Weight

52.786812mg

Turn Off Delay Time

15 ns

Tepe Reflow Sıcaklığı (°C)

260

Yükseklik

1.6mm

Element Configuration

Single

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

15V

JESD-609 Kodu

e3

Terminal Formu

FLAT

Jesd30 Code

R-PSSO-F3

Pin Sayısı

4

Power Dissipation

1.6W

Terminal Kaplaması

Matte Tin (Sn)