TN2435N8-G

Teknik Özellikler

Input Capacitance Ciss Max Vds

200pF @ 25V

Fabrika Tedarik Süresi

6 Weeks

Montaj

Surface Mount

Turn On Delay Time

5 ns

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

40

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Transistor Element Material

SILICON

Drain Currentmax Abs Id

0.365A

Drive Voltage Max Rds On Min Rds On

3V 10V

Vgs Max

±20V

Uzunluk

4.6mm

Continuous Drain Current Id

365mA

Rds On Max Id Vgs

6 Ω @ 750mA, 10V

Montaj Tipi

Surface Mount

Rise Time

10ns

Fall Time Typ

10 ns

Drain To Source Breakdown Voltage

350V

Pin Sayısı

4

Jesd30 Code

R-PSSO-F3

Power Dissipation

1.6W

Direnç

10Ohm

Terminal Kaplaması

Matte Tin (Sn)

Yayın Yılı

2009

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Current Continuous Drain Id25

365mA Tj

Power Dissipation Max

1.6W Ta

Qualification Status

Not Qualified

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Genişlik

2.6mm

Kılıf / Paket

TO-243AA

Number Of Channels

1

Additional Feature

LOGIC LEVEL COMPATIBLE

Vgsth Max Id

2.5V @ 1mA