TN2425N8-G

Teknik Özellikler

Uzunluk

4.6mm

Continuous Drain Current Id

480mA

Rds On Max Id Vgs

3.5 Ω @ 500mA, 10V

Montaj Tipi

Surface Mount

Rise Time

10ns

Fall Time Typ

10 ns

Drain To Source Breakdown Voltage

250V

Drive Voltage Max Rds On Min Rds On

3V 10V

Radyasyon Dayanımı

No

Vgs Max

±20V

Fabrika Tedarik Süresi

6 Weeks

Input Capacitance Ciss Max Vds

200pF @ 25V

Montaj

Surface Mount

Turn On Delay Time

5 ns

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

40

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Transistor Element Material

SILICON

Yükseklik

1.6mm

Tepe Reflow Sıcaklığı (°C)

260

Element Configuration

Single

Case Connection

DRAIN

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

JESD-609 Kodu

e3

Terminal Formu

FLAT

Kılıf / Paket

TO-243AA

Number Of Channels

1

Additional Feature

LOGIC LEVEL COMPATIBLE

Vgsth Max Id

2.5V @ 1mA

Weight

52.786812mg

Turn Off Delay Time

25 ns

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Current Continuous Drain Id25

480mA Tj

Power Dissipation Max

1.6W Tc