TN2106N3-G

Teknik Özellikler

Fall Time Typ

5 ns

Drain To Source Breakdown Voltage

60V

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

2.5 Ω @ 500mA, 10V

Rise Time

5ns

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

NOT APPLICABLE

Continuous Drain Current Id

300mA

Yükseklik

5.33mm

Uzunluk

5.21mm

Element Configuration

Single

Weight

453.59237mg

Vgsth Max Id

2V @ 1mA

Terminal Pozisyonu

BOTTOM

Turn Off Delay Time

6 ns

Vgs Max

±20V

Number Of Channels

1

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Genişlik

4.19mm

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Feedback Capmax Crss

65 pF

Power Dissipation Max

740mW Tc

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Current Continuous Drain Id25

300mA Tj

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Yayın Yılı

2013

Terminal Kaplaması

Matte Tin (Sn)

Power Dissipation

740mW

Tepe Reflow Süresi (maks. sn)

NOT APPLICABLE

Fet Type

N-Channel

Turn On Delay Time

3 ns