TN2106K1-G

Teknik Özellikler

Vgs Max

±20V

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rise Time

5ns

Rds On Max Id Vgs

2.5 Ω @ 500mA, 10V

Montaj Tipi

Surface Mount

Drain To Source Breakdown Voltage

60V

Contact Plating

Tin

Fall Time Typ

5 ns

Uzunluk

2.9mm

Continuous Drain Current Id

280mA

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

40

Parça Durumu

Active

Transistor Element Material

SILICON

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

50pF @ 25V

Fabrika Tedarik Süresi

5 Weeks

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Turn On Delay Time

3 ns

Drain Currentmax Abs Id

0.28A

Feedback Capmax Crss

8 pF

Additional Feature

LOW THRESHOLD, LOGIC LEVEL COMPATIBLE

Number Of Channels

1

Turn Off Delay Time

6 ns

Terminal Pozisyonu

DUAL

Vgsth Max Id

2V @ 1mA

Weight

1.437803g

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Element Configuration

Single

Yükseklik

950μm

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipation

360mW