TN0702N3-G

Teknik Özellikler

Fall Time Typ

20 ns

Drain To Source Breakdown Voltage

20V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Rds On Max Id Vgs

1.3 Ω @ 500mA, 5V

Gate To Source Voltage Vgs

20V

Rise Time

20ns

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

NOT APPLICABLE

Continuous Drain Current Id

530mA

Uzunluk

5.21mm

Yükseklik

5.33mm

Element Configuration

Single

Weight

453.59237mg

Vgsth Max Id

1V @ 1mA

Terminal Pozisyonu

BOTTOM

Turn Off Delay Time

30 ns

Vgs Max

±20V

Number Of Channels

1

Additional Feature

LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Drive Voltage Max Rds On Min Rds On

2V 5V

Drain Currentmax Abs Id

0.6A

Genişlik

4.19mm

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Feedback Capmax Crss

60 pF

Power Dissipation Max

1W Tc

Qualification Status

Not Qualified

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Current Continuous Drain Id25

530mA Tj

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Parça Durumu

Active

Yayın Yılı

2013

Terminal Kaplaması

Matte Tin (Sn)

Power Dissipation

1W

Tepe Reflow Süresi (maks. sn)

NOT APPLICABLE