MS2N5116

Teknik Özellikler

Drain To Source Voltage Vdss

30 V

Input Capacitance Ciss Max Vds

27pF @ 15V

Vgs Gatesource Breakdown Voltage

30 V

Resistance Rdson

175 Ohms

Çalışma Sıcaklığı

-65°C ~ 200°C (TJ)

Drainsource Current At Vgs0

3 mA

Rds On Drainsource Resistance

175 Ohms

Fet Type

P-Channel

Kılıf / Paket

TO-18-3

Vds Drainsource Breakdown Voltage

30 V

Maximum Drain Gate Voltage

30 V

Power Max

500 mW

Current Drain Idss Vds Vgs0

5 mA @ 15 V

Montaj Tipi

Through Hole

Transistor Polarity

P-Channel

Minimum Operating Temperature

- 65 C

Voltage Breakdown Vbrgss

30 V

Ürün Durumu

Active

Configuration

Single

Maks. Çalışma Sıcaklığı

+ 200 C

Paket

Bulk

Montaj Stili

Through Hole

Gatesource Cutoff Voltage

4 V

Voltage Cutoff Vgs Off Id

1 V @ 1 nA

Tedarikçi Cihaz Paketi

TO-18 (TO-206AA)

Pd Power Dissipation

500 mW

Fabrika Paket Adedi

1